60914hk ta-4314/tkim/82599th(kt)/20696yk/63094mt(koto) no.4423-1/4 http://onsemi.com semiconductor components industries, llc, 2014 june, 2014 3SK263 n-channnel dual gate mosfet 15v,30ma,pg=21db,nf=1.1db, cp4 stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. features ? enhancement type ? small noise fgure ? small cross modulation specifcations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v ds 15 v gate1-to-source voltage v g1s 8 v gate2-to-source voltage v g2s 8 v drain current i d 30 ma allowable power dissipation p d 200 mw channel temperature tch 125 c storage temperature tstg --55 to +125 c package dimensions unit : mm (typ) 7014a-006 ordering number : en4423d 2.9 2.5 1.5 0.3 1.1 0.05 1 43 2 0.6 0.85 0.95 0.5 0.5 0.4 0.1 1 : drain 2 : sour ce 3 : gate1 4 : gate2 cp4 3SK263-5-tg-e product & package information ? package : cp4 ? jeita, jedec : sc-61, sc-82ab, sot-143, sot-343 ? minimum packing quantity : 3,000 pcs./reel packing type: tg marking electrical connection rj lot no. lot no. rank tg 1 2 3 4
3SK263 no.4423-2/4 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source voltage v ds v g1s =0v, v g2s =0v, i d =100 m a 15 v gate1-to-source cutoff voltage v g1s (off) v ds =6v, v g2s =4v, i d =100 m a 0 0.7 1.3 v gate2-to-source cutoff voltage v g2s (off) v ds =6v, v g1s =3v, i d =100 m a 0.1 0.9 1.6 v gate1-to-source leakage current i g1ss v g1s = 6v, v g2s =v ds =0v 50 na gate2-to-source leakage current i g2ss v g2s = 6v, v g1s =v ds =0v 50 na zero-gate voltage drain current i dsx v ds =6v, v g1s =1.5v, v g2s =4v * 5 * 12 ma forward transfer admittance | yfs | v ds =6v, i d =10ma, v g2s =4v, f=1khz 14 ms input capacitance ciss v ds =6v, f=1mhz, v g1s =0v, v g2s =4v 2.7 pf reverse transfer capacitance crss 0.015 0.03 pf power gain pg v ds =6v, i d =10ma, v g2s =4v, f=200mhz 18 21 db noise figure nf v ds =6v, i d =10ma, v g2s =4v, f=200mhz 1.1 2.2 db * : the 3SK263 is classifed by i dsx as follows : (unit : ma) rank 5 i dsx 5.0 to 12.0 pg, nf specifed test circuit ordering information device package shipping memo 3SK263-5-tg-e cp4 3,000pcs./reel pb-free ou t 50? v g2s v g1s in 50? 15k? 12? v ds 1000pf 47pf 1000pf 1000pf ~20pf ~20pf ~20pf l : 1mm? enamel wire 10mm? 2 t 3 4 1 t 1 2 2 t 1 2 f=200mhz product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
3SK263 no.4423-3/4 gate2-to-source vo ltage, v g2s - - v i d - - v g2s drain current, i d - - ma gate1-to-source vo ltage, v g1s - - v forward tr ansfer admittance, | y fs | - - ms | y fs | - - v g1s drain-to-source vo ltage, v ds - - v i d - - v ds drain current, i d - - ma gate1-to-source vo ltage, v g1s - - v i d - - v g1s drain current, i d - - ma drain current, i d - - ma forward tr ansfer admittance, | y fs | - - ms | y fs | - - i d ciss - - v g2s gate2-to-source vo ltage, v g2s - - v input capacitance, ciss - - pf ambient t emperature, ta - - c allowable power dissipation, p d - - mw p d - - t a gate2-to-source vo ltage, v g2s - - v pg, nf -- v g2s power gain, pg - - db noise figure, nf - - db 20 16 12 8 4 0 02 46 81 0 2.4v 2.0v 2.2v 1.8v 1.6v 1.4v 1.0v 1.2v 0.8v v g2 s =4 .0 v 5.5v v g2s =6.0 v itr02874 itr02876 25 20 15 10 5 0 0 0.5 1.0 1.5 2.0 2.5 0 0.5 1.0 1.5 2.0 2.5 v ds =6v 5.0v 4.5v 4.0v 3.5v 2.5v 1.0v 1.5v 2.0v 0.5v 3.0v 25 20 15 10 5 0 02 13 45 v ds =6v v g1s =2.5v 2.25v 1.75v 1.25v 0.75v 2.0v 1.5v 1.0v 20 25 15 10 5 0 itr02875 itr02877 4.5v 5.0v 5.5v 2.0v 1.5v 1.0v 2.5v 3.0v 3.5v 4.0v v ds =6v f=1khz 0 - -10 10 20 30 1 0 2 3 4 5 4 01 26 3 240 200 120 160 80 40 0 02 04 06 08 0 100 120 140 pg nf itr02880 itr02881 v ds =6v v g1s : v g2s =4v i d =10ma f=200mhz 4.5v 0 2 3 5 7 20 25 5 10 15 5 01 01 52 02 5 1.0 0 -- 11 24 3 itr02878 5.0v 5.5v itr02879 v ds =6v v g1s : v g2s =4v i d =10ma f=1mhz v g2s =6.0v 2.0v 1.5v 1.0v 2.5v 3.0v 3.5v 4.0v v ds =6v f=1khz v g1s =0.6v v g2 s =6.0 v
3SK263 ps no.4423-4/4 on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. outline drawing land pattern example 3SK263-5-tg-e mass (g) unit 0.013 * for reference mm unit: mm 1.8 1.9 1.2 0.8 1.0 2.4
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